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STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)

measurement

heat
43 / 100 (raw 1.7)
velocity
0.5 independent sources per hour
solidity
80 / 100
sources
1 total, 1 independent
domain span
0 domain covered it
entities

primary source

title
STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)
venue
status
peer-reviewed
doi
10.1016/j.apsusc.2026.166813
arxiv
2607.27939
published
2026-07-30

media coverage / 1 outlets