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LT-012088 / first seen 2026-08-24 14:27 / last activity 15d ago solid / under-covered

Over 600 °C operation of ion-implantation-based SiC bottom-gate JFETs

measurement

heat
20 / 100 (raw 0.4)
velocity
0.0 independent sources per hour
solidity
80 / 100
sources
2 total, 2 independent
domain span
2 domains covered it

primary source

title
Over 600 °C operation of ion-implantation-based SiC bottom-gate JFETs
venue
status
peer-reviewed
doi
10.1063/5.0346734
published
2026-08-17

media coverage / 2 outlets